inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor MMBR931L description low noise figure nf = 4.3 db typ. @v ce = 1 v, i e = 0.25 ma, f = 1 ghz applications designed primarily for use in low-power amplifiers to 1.0 ghz ,ideal for pagers and other battery operated systems where power consumpt ion is critical. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 10 v v ceo collector-emitter voltage 5 v v ebo emitter-base voltage 2 v i c collector current-continuous 5 ma p c collector power dissipation @t c = 75 0.15 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor MMBR931L electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.1ma ; i b = 0 5 v v (br)cbo collector-base breakdown voltage i c = 0.01ma ; i e = 0 10 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma ; i c = 0 2 v i cbo collector cutoff current v cb = 5v; i e = 0 50 na h fe dc current gain i c = 0.25ma ; v ce = 1v 50 150 c ob output capacitance i e = 0; v cb = 1v; f= 1mhz 0.5 pf g nf power gain at optimum figure i e = 0.25ma ; v ce = 1v; f= 1ghz 10 db nf noise figure i e = 0.25ma ; v ce = 1v; f= 1ghz 4.3 db
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